Resonant injection quantum well lasersSCHULMAN, J. N.Applied physics letters. 1986, Vol 49, Num 12, pp 690-692, issn 0003-6951Article

Resonant injection quantum well lasersSCHULMAN, J. N.Applied physics letters. 1986, Vol 49, Num 12, pp 690-692, issn 0003-6951Article

Ga_1-xAl_xAs-Ga_1-yAl_yAs-GaAs double-barrier structuresSCHULMAN, J. N.Journal of applied physics. 1986, Vol 60, Num 11, pp 3954-3958, issn 0021-8979Article

Analysis of second level resonant tunneling diodes and transistorsSCHULMAN, J. N; WALDNER, M.Journal of applied physics. 1988, Vol 63, Num 8, pp 2859-2861, issn 0021-8979, 1Article

Band offsets: the charge transfer effectNAKAYAMA, T.Physica. B, Condensed matter. 1993, Vol 191, Num 1-2, pp 16-22, issn 0921-4526Article

Extended-range tight-binding method for tunnelingSCHULMAN, J. N; TING, D. Z.-Y.Physical review. B, Condensed matter. 1992, Vol 45, Num 11, pp 6282-6285, issn 0163-1829Article

HgTe-CdTe double barrier tunneling structuresSCHULMAN, J. N; ANDERSON, C. L.Applied physics letters. 1986, Vol 48, Num 24, pp 1684-1686, issn 0003-6951Article

HgTe-CdTe superlattice subband dispersionSCHULMAN, J. N; CHANG, Y.-C.Physical review. B, Condensed matter. 1986, Vol 33, Num 4, pp 2594-2601, issn 0163-1829Article

HgTe-CdTe superlattice band-gap enhancement due to interdiffusionSCHULMAN, J. N; YIA-CHUNG CHANG.Applied physics letters. 1985, Vol 46, Num 6, pp 571-573, issn 0003-6951Article

Tight-binding analysis of energy-band structures of quantum wiresARAKAWA, Y; YAMAUCHI, T; SCHULMAN, J. N et al.Physical review. B, Condensed matter. 1991, Vol 43, Num 6, pp 4732-4738, issn 0163-1829, 7 p.Article

Dependence of lasing characteristics of quantum well lasers on substrate orientation : tight-binding theoryTAKAHASHI, T; SCHULMAN, J. N; ARAKAWA, Y et al.Applied physics letters. 1991, Vol 58, Num 9, pp 881-883, issn 0003-6951Article

Magneto-optical properties of Mn-based II-VI semimagnetic superlatticesNICHOLAS, R. J.Physica. B, Condensed matter. 1993, Vol 191, Num 1-2, pp 156-170, issn 0921-4526Article

Sb-Heterostructure Millimeter-Wave Detectors With Reduced Capacitance and Noise Equivalent PowerSU, N; RAJAVEL, R; DEELMAN, P et al.IEEE electron device letters. 2008, Vol 29, Num 6, pp 536-539, issn 0741-3106, 4 p.Article

Temperature dependence of high frequency and noise performance of sb-heterostructure millimeter-wave detectorsSU, N; ZHANG, Z; SCHULMAN, J. N et al.IEEE electron device letters. 2007, Vol 28, Num 5, pp 336-339, issn 0741-3106, 4 p.Article

Characteristics of ZnCdSe single-quantum-well diodesTSUJIMURA, A; YOSHII, S; HAYASHI, S et al.Physica. B, Condensed matter. 1993, Vol 191, Num 1-2, pp 130-132, issn 0921-4526Article

Growth of ZnMgSSe and fabrication of blue laser diodesAKIMOTO, K; OKUYAMA, H; MIYAJIMA, T et al.Physica. B, Condensed matter. 1993, Vol 191, Num 1-2, pp 133-135, issn 0921-4526Article

Light hole interband transitions in HgTe-HgCdTe superlatticesSCHULMAN, J. N; WU, O. K; PATTEN, E. A et al.Applied physics letters. 1988, Vol 53, Num 24, pp 2420-2422, issn 0003-6951Article

Barrier-width dependence of optical transitions involving unconfined energy states in GaAs-Al_xGa_1-xAs superlatticesSONG, J. J; YOON, Y. S; FEDOTOWSKY, A et al.Physical review. B, Condensed matter. 1986, Vol 34, Num 12, pp 8958-8962, issn 0163-1829Article

Barrier-width dependence of optical transitions involving unconfined energy states in GaAs-Al_xGa_1-xAs superlatticesSONG, J. J; YOON, Y. S; FEDOTOWSKY, A et al.Physical review. B, Condensed matter. 1986, Vol 34, Num 12, pp 8958-8962, issn 0163-1829Article

Theoretical aspects of blue-green II-VI strained quantum well lasersAHN, D.Physica. B, Condensed matter. 1993, Vol 191, Num 1-2, pp 140-155, issn 0921-4526Article

Change accumulation in a double-barrier resonant-tunneling structure studies by photoluminescence and photoluminescence-excitation spectroscopyYOSHIMURA, H; SCHULMAN, J. N; SAKAKI, H et al.Physical review letters. 1990, Vol 64, Num 20, pp 2422-2425, issn 0031-9007Article

Band mixing in semiconductor superlatticesSCHULMAN, J. N; YIA-CHUNG CHANG.Physical review. B, Condensed matter. 1985, Vol 31, Num 4, pp 2056-2068, issn 0163-1829Article

Modification of optical properties of GaAs-Ga_1-XAl_XAs superlattices due to a band mixingYIA-CHUNG CHANG; SCHULMAN, J. N.Applied physics letters. 1983, Vol 43, Num 6, pp 536-538, issn 0003-6951Article

InAs/antimonide-based resonant tunneling structures with ternary alloy layersSCHULMAN, J. N; CHOW, D. H; HASENBERG, T. C et al.Solid-state electronics. 1994, Vol 37, Num 4-6, pp 981-985, issn 0038-1101Conference Paper

Theoretical analysis of band structures and lasing characteristics in strained quantum wire lasersYAMAUCHI, T; TAKAHASHI, T; SCHULMAN, J. N et al.IEEE journal of quantum electronics. 1993, Vol 29, Num 6, pp 2109-2116, issn 0018-9197Article